smd type ic www.kexin.com.cn 1 smd type transistors n- and p-channel 30-v (d-s) mosfet KI4532DY absolute maximum ratings t a =25 parameter symbol n-channel p-channel unit drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v continuous drain current (t j = 150 )* t a =25 3.9 3.5 a t a =70 3.1 2.8 a pulsed drain current i dm 20 20 a continuous source current (diode conduction)* i s 1.7 -1.7 a maximum power dissipation* t a =25 22w t a =70 1.3 1.3 w operating junction and storage temperature range t j ,t stg maximum junction-to-ambient* r thja /w *surface mounted on fr4 board, t 10 sec. 62.5 -55to150 i d p d pin configuration
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics t j =25 parameter symbol min typ max unit v ds =v gs ,i d =250 a n-ch 1 v ds =v gs ,i d =-250 a p-ch -1 v ds =0vv gs = 20 v n-ch 100 v ds =0vv gs = 20 v p-ch 100 v ds =30v,v gs =0v n-ch 1 v ds =-30v,v gs =0v p-ch -1 v ds =30v,v gs =0v,t j =55 n-ch 25 v ds =-30v,v gs =0v,t j =55 p-ch -25 v ds 5v,v gs =10v n-ch 15 v ds -5 v, v gs =-10v p-ch -15 v gs =10v,i d = 3.9a n-ch 0.043 0.065 v gs =-10v,i d = -2.5a p-ch 0.066 0.085 v gs =4.5v,i d = 3.1a n-ch 0.075 0.095 v gs =-4.5v,i d = -1.8a p-ch 0.125 0.19 v ds =15v,i d =3.9a n-ch 7 v ds =-15v,i d = -2.5a p-ch 5 i s =1.7a,v gs =0v n-ch 0.8 1.2 i s = -1.7a, v gs = 0 v p-ch -0.8 -1.2 n-channel n-ch 9.8 15 v ds =10v,v gs =10v,i d = 3.9a p-ch 8.7 15 n-ch 2.1 p-channel p-ch 1.9 v ds =-10v,v gs =-10v,i d = -2.5a n-ch 1.6 p-ch 1.3 n channel n-ch 9 15 v dd =10v,r l =10 p-ch 7 15 i d =1a,v gen =10v,r g =6 n-ch 6 18 p-ch 9 18 p-channel n-ch 18 27 v dd =-10v,r l =10 p-ch 14 27 i d =-1a,v gen =-10v,r g =6 n-ch 6 15 p-ch 8 15 i f =1.7a,d i /d t =100a/ s n-ch 52 80 i f =-1.7a,d i /d t =100a/ s p-ch 50 80 * pulse test; pulse width 300 s, duty cycle 2%. nc source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f fall time turn on time a s v v na a v gs( th) i gss i dss testconditons q g gate threshold voltage gate body leakage zero gate voltage drain current on state drain currenta q gd i d(on) g fs forward transconductance* rise time turn off delay time r ds(on) drainsourceonstateresistance* diode forward voltage* total gate charge gate source charge gate drain charge v sd q gs KI4532DY
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